Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

被引：54

作者：

Gao, Bin ^{[1
]}

Zhang, Haowei ^{[1
]}

Chen, Bing ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Han, Ruqi ^{[1
]}

Kang, Jinfeng ^{[1
]}

Fang, Zheng ^{[2
]}

Yu, Hongyu ^{[2
]}

Yu, Bin ^{[3
]}

Kwong, Dim-Lee ^{[4
]}

机构：

[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[4] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Hafnium oxide; nonvolatile memory; resistive switching; retention; resistive random access memory (RRAM); FILMS; RRAM;

D O I：

10.1109/LED.2010.2102002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The retention failure of bipolar oxide-based resistive switching memory is investigated. A new physical model is proposed to elucidate the typical retention failure behavior of the oxide-based resistive switching memory with a sudden resistance transition, which is quite different from that of the traditional memories. In the new proposed model, the temperature-and bias-dependent failure probability and failure time of the devices can be quantified. A temperature-and voltage-acceleration method is developed to evaluate the retention of resistive switching memories.

引用

页码：276 / 278

页数：3

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