High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

被引：0
|
作者：
Qi, Meng [1 ]
Namoto, Kazuki [1 ]
Zhu, Mingda [1 ]
Hu, Zongyang [1 ]
Zhao, Yuning [1 ]
Song, Bo [1 ]
Li, Guowang [1 ]
Fay, Patrick [1 ]
Xing, Huili [1 ]
Jena, Debdeep [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：31 / 32
页数：2
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