Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices

被引：2
|
作者：
Fudeta, M [1 ]
Asahi, H [1 ]
Kim, SJ [1 ]
Noh, JH [1 ]
Asami, K [1 ]
Gonda, S [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
quantum dot; GaP/InP short-period superlattice; self-formation; photoluminescence; linewidth broadening; vertical coupling; PL intensity;
D O I：
10.1143/JJAP.38.1078
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of multilayer quantum dots (MQDs) self-formed in the GaP/InP short-period superlattice (SL)/InGaP multilayer structures are investigated as a function of InGaP barrier thickness (B). Photoluminescence (PL)linewidth broadening with temperature is improved and tends to reduce by decreasing B. This is attributed to the vertical coupling effect between QDs and their vertical alignment. Temperature variation of PL properties shows the exciton behavior. At low temperatures, emissions from both bound exciton and free exciton appear under the weak excitation density condition. Integrated PL intensity is quite stable up to 120 K.
引用
收藏
页码：1078 / 1080
页数：3
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