Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices

被引：2
|
作者：
Fudeta, M [1 ]
Asahi, H [1 ]
Kim, SJ [1 ]
Noh, JH [1 ]
Asami, K [1 ]
Gonda, S [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
quantum dot; GaP/InP short-period superlattice; self-formation; photoluminescence; linewidth broadening; vertical coupling; PL intensity;
D O I：
10.1143/JJAP.38.1078
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of multilayer quantum dots (MQDs) self-formed in the GaP/InP short-period superlattice (SL)/InGaP multilayer structures are investigated as a function of InGaP barrier thickness (B). Photoluminescence (PL)linewidth broadening with temperature is improved and tends to reduce by decreasing B. This is attributed to the vertical coupling effect between QDs and their vertical alignment. Temperature variation of PL properties shows the exciton behavior. At low temperatures, emissions from both bound exciton and free exciton appear under the weak excitation density condition. Integrated PL intensity is quite stable up to 120 K.
引用
收藏
页码：1078 / 1080
页数：3
相关论文
共 50 条
  • [21] Optical properties of quantum-wires grown using lateral composition modulation induced by (InP)1/(GaP)1 short-period superlattices
    Song, JD
    Kim, JM
    Lee, YT
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY, 2004, 794 : 47 - 52
  • [22] OPTICAL-PROPERTIES OF AIP-GAP SHORT-PERIOD SUPERLATTICES
    MORII, A
    TAKANO, T
    KITAMURA, J
    HARA, K
    KUKIMOTO, H
    YOSHINO, J
    YASUDA, T
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 649 - 652
  • [23] Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices
    Chatzopoulou, Polyxeni
    Vasileiadis, Isaak G.
    Komninou, Philomela
    Pontikis, Vassilis
    Karakostas, Theodoros
    Dimitrakopulos, George P.
    CRYSTALS, 2023, 13 (04)
  • [24] Strain-induced quantum dots: Fabrication and optical properties
    Ahopelto, J
    Sopanen, M
    Lipsanen, H
    Taskinen, M
    Tulkki, J
    Sandmann, JHH
    Grosse, S
    von Plessen, G
    Feldmann, J
    Hayes, G
    Phillips, R
    Rinaldi, R
    Giugno, PV
    Cingolani, R
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 12 : 41 - 47
  • [25] Growth and optical properties of strain-induced quantum dots
    Lipsanen, H
    Sopanen, M
    Tulkki, J
    Ahopelto, J
    Braskén, M
    Lindberg, M
    PHYSICA SCRIPTA, 1999, T79 : 20 - 26
  • [26] Initiation and evolution of phase separation in GaP/InP short-period superlattices
    Shin, B
    Chen, W
    Goldman, RS
    Song, JD
    Kim, JM
    Lee, YT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 216 - 219
  • [27] Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices
    Doi, K
    Asahi, H
    Kim, JH
    Asami, K
    Gonda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11A): : L1391 - L1394
  • [28] Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices
    Doi, Kenji
    Asahi, Hajime
    Kim, Joon Hong
    Asami, Kumiko
    Gonda, Shun-ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1996, 35 (11 A): : 1391 - 1394
  • [29] Electronic, structural and optical properties of AlAs/GaP strained short-period superlattices
    Ohnuma, T
    Nagano, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7A): : 4237 - 4240
  • [30] Electronic, structural and optical properties of AlAs/GaP strained short-period superlattices
    Ohnuma, Toshiharu
    Nagano, Masahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4237 - 4240
12345