Improvement in reliability of Cu dual-damascene interconnects using Cu-Al alloy seed

被引：0

作者：

Maekawa, K ^{[1
]}

Mori, K ^{[1
]}

Kobayashi, K ^{[1
]}

Kumar, N ^{[1
]}

Chu, S ^{[1
]}

Chen, S ^{[1
]}

Lai, G ^{[1
]}

Diehl, D ^{[1
]}

Yoneda, M ^{[1
]}

机构：

[1] Renesas Technol Corp, Proc Dev Dept, Proc Technol Dev Div, Prod & Technol Unit, Itami, Hyogo 6640005, Japan

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the utilization of Cu-AI alloy seed for 90nm node Cu dual-damascene interconnects has been investigated for its effect on reliability improvement. Via reliability, such as stress induced voiding and electromigration resistance, was greatly improved without an unacceptable increase in via resistance. A small amount of Al in Cu seems to help prevent the diffusion of vacancies and Cu atoms in Cu interconnects. Using Cu-AI alloy seed is one of the most promising and simple techniques to improve the via reliability of Cu interconnects for the 65nm node and beyond.

引用

页码：221 / 226

页数：6

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