Technology CAD for smart power devices

被引：0

作者：

Plasun, R ^{[1
]}

Pichler, C ^{[1
]}

Simlinger, T ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Tech Univ, Inst Microelect, A-1040 Vienna, Austria

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Technology CAD has already proven to be an attractive and indispensable supplement to standard process development methodologies for VLSI technology. The flexibility and versatility of TCAD makes it ideally applicable for smart power technology to cut down development costs and cycle times. The Vienna Integrated System for TCAD Applications is a simulation environment which offers great flexibility and a large number of tools for process development. Smart power devices gain increasingly interest for applications which need to combine low voltage logic and power Output devices as, e.g, for automotive electronics.

引用

页码：481 / 488

页数：8

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