Magnetoresistance oscillation at charge neutrality point in monolayer graphene due to potential fluctuation

被引：0
|
作者：
Yagi, Ryuta [1 ]
Fukada, Seiya [1 ]
Kobara, Hiroaki [1 ]
Shintani, Yumi [1 ]
Ogita, Norio [1 ]
Udagawa, Masayuki [1 ]
机构：
[1] Hiroshima Univ, Grad Sch Adv Sci Matter AdSM, Higashihiroshima 7398530, Japan
来源：
FOURTH INTERNATIONAL SYMPOSIUM ON ATOMIC TECHNOLOGY | 2010年 / 232卷
关键词：
TRANSPORT;
D O I：
10.1088/1742-6596/232/1/012013
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
We have studied magnetoresistance fluctuation of monolayer graphene at the minimum conductivity point. We found that peaks of the fluctuation could be assigned to a few series of oscillation periodic in 1/B. Temperature dependence of the amplitude indicated that the oscillation is due to Shubnikov-de Haas effect arising from potential fluctuation. From the oscillation, we have estimated typical magnitude of the potential fluctuation and size of the local domain.
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页数：5
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