High-field magneto-transport at charge neutrality point in monolayer graphene

被引：0
|
作者：
Yoshida, T. [1 ]
Oto, K. [1 ]
机构：
[1] Chiba Univ, Grad Sch Sci, Chiba 2638522, Japan
来源：
HORIBA INTERNATIONAL CONFERENCE: THE 19TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF HIGH MAGNETIC FIELDS IN SEMICONDUCTOR PHYSICS AND NANOTECHNOLOGY | 2011年 / 334卷
关键词：
D O I：
10.1088/1742-6596/334/1/012036
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the magneto-transport around filling factor nu=0 in monolayer graphene sheet. Zero Hall plateau of Hall conductivity and minimum of longitudinal conductivity have been clearly observed despite the highly fluctuated behaviour of magneto-resistance above 10 T. These phenomena can be understood by the transport of counter-propagating electron and hole edge states at the charge neutrality point. We tried to explain the origin of remarkable fluctuations in magneto-resistance by the energy relaxations among the counter-propagating edge channels.
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页数：5
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