Electrical degradation of CMOS devices due to focused ion beam exposure

被引：8

作者：

Benbrik, J ^{[1
]}

Perdu, P ^{[1
]}

Benteo, B ^{[1
]}

Desplats, R ^{[1
]}

Labat, N ^{[1
]}

Touboul, A ^{[1
]}

Danto, Y ^{[1
]}

机构：

[1] CNES, SOREP Lab, F-33401 Toulouse 4, France

来源：

1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年

关键词：

D O I：

10.1109/PPID.1998.725591

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Focused ion beam degrades CMOS devices by charging up the device surface. The presence of ions on the device surface is comparable to a plasma. We have performed measurements on CMOS test devices, and hence modeled the influence of focused ion beam on transistors below the passivation layer. An in-depth analysis of these results has allowed to characterize intrinsic parameters modification down to the semiconductor level. We have extracted these parameters in order to simulate FIB induced degradation on Integrated Circuits. These simulations will aim at predict the impact of FIB on the reliability of integrated circuits under irradiation.

引用

页码：128 / 131

页数：4

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