Fabrication & Tailoring of Silicon Photonic Devices via Focused Ion Beam

被引:3
|
作者
Howe, S. [1 ]
Headley, W. R. [1 ]
Cox, D. C. [1 ]
Mashanovich, G. Z. [1 ]
Thomson, D. J. [1 ]
Reed, G. T. [1 ]
机构
[1] Univ Surrey, Adv Technol Inst, Fac Engn & Phys Sci, Surrey GU2 7XH, England
来源
SILICON PHOTONICS IV | 2009年 / 7220卷
关键词
Silicon-On-Insulator (SOI); Silicon Photonics; Focused Ion Beam Processing;
D O I
10.1117/12.811008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As Silicon Photonics is developing further towards integration on a single platform, the need for precise fabrication is paramount and no matter how developed a technology is, there is always potential for error at the wafer and chip level. In combination with Focused Ion Beam (FIB) technology, we present direct write methods to fabricate and tailor Silicon Photonic devices to offer the potential of prototyping, testing and correction in a post-processing environment. However, inherent in most FIB processing is the introduction of large optical loss due to damage and implantation of Gallium, because Gallium is typically the gas species used in FIBs. Therefore, methods of processing to minimise potential loss and changes to the original device design will be presented alongside results and a discussion offering a comparison with other potential methods.
引用
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页数:9
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