Linewidth roughness in nanowire-mask-based graphene nanoribbons

被引：12

作者：

Xu, Guangyu ^{[1
]}

Torres, Carlos M., Jr. ^{[1
]}

Bai, Jingwei ^{[2
]}

Tang, Jianshi ^{[1
]}

Yu, Tao ^{[3
]}

Huang, Yu ^{[2
]}

Duan, Xiangfeng ^{[4
]}

Zhang, Yuegang ^{[5
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[3] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[4] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

关键词：

LINE-EDGE ROUGHNESS; TRANSISTORS; MOSFETS;

D O I：

10.1063/1.3599596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the analysis of linewidth roughness (LWR) in nanowire-mask-based graphene nanoribbons (GNRs) and evaluate its impact on the device performance. The data show that the LWR amplitude decreases with the GNR width, possibly due to the etching undercut near the edge of a nanowire-mask. We further discuss the large variation in GNR devices in the presence of LWR by analyzing the measured transport properties and on/off ratios. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599596]

引用

页数：3

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