Annealing effects on microstructure and thermoelectric properties of Bi2(Te0.95Se0.05)3 thin films prepared by flash evaporation method

N-type Bi-2(Te0.95Se0.05)(3) thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were characterized by X-ray diffraction and field emission scanning electron microscope, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of Seebeck coefficient and electrical resistivity at 300 K. Annealing effect on Seebeck coefficient and electrical resistivity of the thin films was examined in the temperature range 373-573 K. When annealed at 473 K for 1 h, Seebeck coefficient and electrical resistivity are 180 mu V/K and 2.7 m Omega cm, respectively. Thermoelectric power factor is improved to 12 mu W/cmK(2).