Annealing effects on microstructure and thermoelectric properties of Bi2(Te0.95Se0.05)3 thin films prepared by flash evaporation method

被引：0
|
作者：
Duan, Xingkai [1 ]
Jiang, Yuezhen [2 ]
机构：
[1] Jiujiang Univ, Sch Mech & Mat Engn, Jiujiang 332005, Peoples R China
[2] Jiujiang Univ, Sch Elect Engn, Jiujiang 332005, Peoples R China
来源：
APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4 | 2011年 / 287-290卷
关键词：
Bi-2(Te0.95Se0.05)(3); Thin Films; Thermoelectric Properties; Annealing; CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-RESISTIVITY; TRANSPORT-PROPERTIES; P-TYPE; TEMPERATURE; COEVAPORATION; OPTIMIZATION; THICKNESS; DEVICES; GROWTH;
D O I：
10.4028/www.scientific.net/AMR.287-290.2434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
N-type Bi-2(Te0.95Se0.05)(3) thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were characterized by X-ray diffraction and field emission scanning electron microscope, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of Seebeck coefficient and electrical resistivity at 300 K. Annealing effect on Seebeck coefficient and electrical resistivity of the thin films was examined in the temperature range 373-573 K. When annealed at 473 K for 1 h, Seebeck coefficient and electrical resistivity are 180 mu V/K and 2.7 m Omega cm, respectively. Thermoelectric power factor is improved to 12 mu W/cmK(2).
引用
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页码：2434 / +
页数：2
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