Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

被引：1

作者：

Xu, Wanjie ^{[1
]}

Wong, Hei ^{[1
]}

Iwai, Hiroshi ^{[2
]}

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan

来源：

ADVANCES IN CONDENSED MATTER PHYSICS | 2015年 / 2015卷

关键词：

THRESHOLD VOLTAGE; COMPACT MODEL; GATE; TRANSPORT;

D O I：

10.1155/2015/605987

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

引用

页数：8

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