Bounding the severity of hysteretic transient effects in partially-depleted SOI CMOS

被引：1
|
作者：
Wei, A [1 ]
Antoniadis, DA [1 ]
机构：
[1] MIT,MICROSYST TECHNOL LABS,CAMBRIDGE,MA 02139
来源：
1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/SOI.1996.552500
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：74 / 75
页数：2
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