Negative Capacitance FETs with Steep Switching by Ferroelectric Hf-based Oxide

被引：0

作者：

Lee, M. H. ^{[1
]}

Chen, P. -G. ^{[1
,2
]}

Fan, S. -T. ^{[3
]}

Kuo, C. -Y. ^{[1
]}

Chen, H. -H. ^{[1
]}

Gu, S. -S. ^{[1
]}

Chou, Y. -C. ^{[1
]}

Tang, C. -H. ^{[1
]}

Hong, R. -C. ^{[1
]}

Wang, Z. -Y. ^{[1
]}

Liao, M. -H. ^{[2
]}

Li, K. -S. ^{[4
]}

Chen, M. -C. ^{[4
]}

Liu, C. W. ^{[3
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Mech Engn, Taipei, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan

[4] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800 degrees C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

引用

页数：2

共 50 条

[41] A Computational Framework for Gradually Switching Ferroelectric-Based Negative Capacitance Field-Effect Transistors
Lee, Hyunjae
Sritharan, Mayuri
Yoon, Youngki
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5928 - 5933
[42] Temperature effects of constant bias stress on n-channel FETs with Hf-based gate dielectric
Choi, R
Lee, BH
Young, CD
Sim, JH
Bersuker, G
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2201 - 2204
[43] Negative Capacitance and Switching Dynamics Control Via Non-Ferroelectric Elements
Boni, Andra Georgia
Patru, Roxana
Filip, Lucian D.
Chirila, Cristina
Pasuk, Iuliana
Pintilie, Ioana
Pintilie, Lucian
ACS APPLIED ENERGY MATERIALS, 2022, 5 (03) : 3307 - 3318
[44] The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs
Sun, Xiaoqing
Zhang, Yuanyuan
Xiang, Jinjuan
Han, Kai
Wang, Xiaolei
Wang, Wenwu
Ye, Tianchun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (09) : 4735 - 4740
[45] Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing
Peng, Yue
Xiao, Wenwu
Han, Genquan
Wu, Jibao
Liu, Huan
Liu, Yan
Xu, Nuo
Liu, Tsu-Jae King
Hao, Yue
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) : 9 - 12
[46] Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides
Cheng, Chun-Hu
Fan, Chia-Chi
Liu, Chien
Hsu, Hsiao-Hsuan
Chen, Hsuan-Han
Hsu, Chih-Chieh
Wang, Shih-An
Chang, Chun-Yen
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (02) : 1082 - 1086
[47] Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System
Ohta, A.
Murakami, H.
Higashi, S.
Miyazaki, S.
15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15), 2013, 417
[48] Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
Mulaosmanovic, Halid
Mueller, Franz
Lederer, Maximilian
Ali, Tarek
Hoffmann, Raik
Seidel, Konrad
Zhou, Haidi
Ocker, Johannes
Mueller, Stefan
Duenkel, Stefan
Kleimaier, Dominik
Mueller, Johannes
Trentzsch, Martin
Beyer, Sven
Breyer, Evelyn T.
Mikolajick, Thomas
Slesazeck, Stefan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3466 - 3471
[49] MoS2 Negative Capacitance FETs with CMOS-Compatible Hafnium Zirconium Oxide
McGuire, Felicia A.
Lin, Yuh-Chen
Rayner, Bruce
Franklin, Aaron D.
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
[50] Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs
Hu, Vita Pi-Ho
Chiu, Pin-Chieh
Lu, Yi-Chun
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01): : 295 - 302

← 1 2 3 4 5 →