Negative Capacitance FETs with Steep Switching by Ferroelectric Hf-based Oxide

被引：0
|
作者：
Lee, M. H. [1 ]
Chen, P. -G. [1 ,2 ]
Fan, S. -T. [3 ]
Kuo, C. -Y. [1 ]
Chen, H. -H. [1 ]
Gu, S. -S. [1 ]
Chou, Y. -C. [1 ]
Tang, C. -H. [1 ]
Hong, R. -C. [1 ]
Wang, Z. -Y. [1 ]
Liao, M. -H. [2 ]
Li, K. -S. [4 ]
Chen, M. -C. [4 ]
Liu, C. W. [3 ]
机构：
[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan
[2] Natl Taiwan Univ, Dept Mech Engn, Taipei, Taiwan
[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan
[4] Natl Nano Device Labs, Hsinchu, Taiwan
来源：
2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800 degrees C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.
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页数：2
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