Hydrogen in polycrystalline ZnO thin films

被引：25

作者：

Kim, W. M. ^{[1
]}

Kim, Y. H. ^{[1
,3
]}

Kim, J. S. ^{[1
,3
]}

Jeong, J. ^{[2
]}

Baik, Y-J ^{[1
]}

Park, J-K ^{[1
]}

Lee, K. S. ^{[1
]}

Seong, T-Y ^{[3
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Korea Inst Sci & Technol, Solar Cell Ctr, Seoul 136791, South Korea

[3] Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 36期

关键词：

ELECTRICAL-PROPERTIES; OXIDE-FILMS; ZINC-OXIDE; TRANSPARENT; TRANSPORT;

D O I：

10.1088/0022-3727/43/36/365406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.

引用

页数：5

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