Performance of imide and methide onium PAGs in 193nm resist formulations

被引:1
|
作者
Padmanaban, M [1 ]
Dammel, R [1 ]
Lee, S [1 ]
Kim, WK [1 ]
Kudo, T [1 ]
Mckenzie, D [1 ]
Rahman, D [1 ]
机构
[1] Clariant Corp, AZ Elect Mat, Somerville, NJ 08807 USA
关键词
fluoroalkylsulfonyl imide; methide PAGs; 193nm resist; lithographic performance;
D O I
10.1117/12.487738
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The performance of a new class of photoacid generators (PAGs) made from the onium salts of bis(perfluoroalkylsulfonyl)imide and tris(perfluoroalkylsulfonyl)methide anions were studied in 193nm formulations. The lithographic properties such as sensitivity, resolution, pattern profiles, footing, I-D bias and PEB sensitivity were investigated in methacrylate and COMA/methacrylate hybrid type matrix resins. In general the iodonium PAGs were about three times slower than the sulfonium PAGs. Methide and imide PAGs possessing similar fluoroalkylgroups showed comparable performance in terms of exposure latitude, I-D bias. And PEB sensitivity. Compared to the reference PAG, the profiles exhibited T-tops and scum. Among the new PAGs studied bis(perfluorobutanesulfonyl)imide exhibited close performance to that of the reference PAG except for the scum. Details on the exposure results of these PAGs in both methacrylate type and COMA/methacrylate hybrid type polymer based 193nm resist formulations are provided.
引用
收藏
页码:743 / 751
页数:9
相关论文
共 50 条
  • [31] Semi-aqueous solvent applications for 193nm EAPSM resist strip
    Reyes, J
    Jackson, C
    Dieu, L
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 : 600 - 605
  • [32] Development of an operational high refractive index resist for 193nm immersion lithography
    Zimmenrman, Paul A.
    Byers, Jeff
    Piscani, Emil
    Rice, Bryan
    Ober, Christopher K.
    Giannelis, Emmanuel P.
    Rodriguez, Robert
    Wang, Dongyan
    Whittaker, Andrew
    Blakey, Idriss
    Chen, Lan
    Dargaville, Bronwin
    Liu, Heping
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [33] Thickness dependence of the lithographic performance in 193nm photoresists
    Kim, Jae Hyun
    Choi, Namuk
    Kim, Young-Ho
    Kim, Tae-Sung
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1256 - U1263
  • [34] High performance 193nm photoresists based on fluorosulfonamide
    Li, Wenjie
    Chen, Kuang-Jung
    Kwong, Ranee
    Lawson, Margaret C.
    Khojasteh, Mahmoud
    Popova, Irene
    Varanasi, P. Rao
    Shimokawa, Tsutomu
    Yamaguchi, Yoshikazu
    Kusumoto, Shiro
    Sugiura, Makoto
    Kawakami, Takanori
    Slezak, Mark
    Dabbagh, Gary
    Liu, Zhi
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [35] PEB sensitivity variation of 193nm resist according to activation energy of protection groups
    Oh, SK
    Kim, AY
    Lee, AW
    Kim, D
    Kim, J
    Lee, GS
    Jung, JC
    Bok, CK
    Shin, KS
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 625 - 632
  • [36] Study and control of the interfacial mass transfer of resist components in 193nm immersion lithography
    Kanna, S
    Inabe, H
    Yamamoto, K
    Tarutani, S
    Kanda, H
    Mizutani, K
    Kitada, K
    Uno, S
    Kawabe, Y
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 40 - 51
  • [37] Structural design of new alicyclic acrylate polymer with and rostane moiety for 193nm resist
    Aoai, T
    Sato, K
    Kodama, K
    Kawabe, Y
    Nakao, H
    Yagihara, M
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 283 - 294
  • [38] Study and control of the interfacial mass transfer of resist components in 193nm immersion lithography
    Kanna, S
    Inabe, H
    Yamamoto, K
    Tarutani, S
    Kanda, H
    Mizutani, K
    Kitada, K
    Uno, S
    Kawabe, Y
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) : 603 - 613
  • [39] Effect of Molecular Weights of 193nm Resist Polymers on the Negative Tone Development Process
    Bae, Young C.
    Lee, Seung-Hyun
    Bell, Rosemary
    Park, Jong Keun
    Cardolaccia, Thomas
    Liu, Yi
    Sun, Jibin
    Andes, Cecily
    Kim, Young Seok
    Barclay, George G.
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2011, 24 (02) : 211 - 217
  • [40] Study of the Outgassing from the ArF CA Resist during ArF (193nm) Exposure
    Sekiguchi, Atsushi
    Ogawa, Kengo
    Tanabe, Kenji
    Matsunobe, Takeshi
    Oda, Fumihiko
    Morimoto, Yukihiro
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2009, 22 (03) : 329 - 334