Inspection of Through Silicon Vias (TSV) and other Interconnections in IC packages by Computed Tomography

被引：12
|
作者：
Roth, Holger [1 ]
He, Zhenhui [2 ]
Mayer, Thomas [2 ]
机构：
[1] Gen Elect Sensing & Inspect Technol GmbH, Kranstr 8, D-70499 Stuttgart, Germany
[2] Niels Bohr, D-31515 Wunstorf, Germany
来源：
2009 11TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2009) | 2009年
关键词：
D O I：
10.1109/EPTC.2009.5416506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Through silicon vias (TSV) as used in 3D integrated electronic packages were inspected non-destructively by highly resolving nanofocus computed tomography (nanoCT). In particular, in the TSVs plating voids were visualised and quantitatively evaluated by numerical processing of the resulting volumetric data. The nanoCT technology is outlined and further applications such as interposers etc. are considered.
引用
收藏
页码：438 / +
页数：2
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