Periodic surface modulation on thin epitaxial FeSi2 layers on Si(001)

被引：13

作者：

Hajjar, S ^{[1
]}

Garreau, G ^{[1
]}

Pelletier, S ^{[1
]}

Bertoncini, P ^{[1
]}

Wetzel, P ^{[1
]}

Gewinner, G ^{[1
]}

Imhoff, M ^{[1
]}

Pirri, C ^{[1
]}

机构：

[1] Fac Sci & Tech, CNRS, UMR 7014, Lab Phys & Spect Elect, F-68093 Mulhouse, France

来源：

SURFACE SCIENCE | 2003年 / 532卷

关键词：

surface structure; morphology; roughness and topography; photoelectron spectroscopy; photoelectron diffraction; scanning tunneling microscopy; solid-phase epitaxy; metal-semiconductor interfaces; silicides; silicon;

D O I：

10.1016/S0039-6028(03)00142-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The morphology and the structure of thin metastable iron disilicide films grown on Si(0 0 1) are studied by scanning tunneling microscopy and X-ray photoelectron diffraction. It is shown that the FeSi2 silicide has a quadratic crystallographic structure, with the c-axis perpendicular to the sample surface. As to the film morphology, the silicide consists of rather flat islands with a root2 x root2R45degrees surface periodicity for a coverage lower than 4 ML. At a nominal Fe coverage of 4 ML, the silicon surface is almost completely covered. The surface exhibits a quite periodic height modulation of about 2Angstrom. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：940 / 945

页数：6

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