Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001)Si

被引：18
|
作者：
Chen, SY [1 ]
Chen, HC [1 ]
Chen, LJ [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2202701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Endotaxial growth of self-assembled alpha-FeSi2 nanowires (NWs) on (100)Si has been achieved by combining reactive deposition epitaxy and nitride-mediated epitaxy. The length and the length/width aspect ratio of metallic alpha-FeSi2 NWs could be increased more than 12 and 6 folds to 2 mu m, and 200 respectively, with a narrow width of 5-10 nm after prolonged annealing. The adjustment capability is attributed to the diminished flux of Fe adatoms mediated by the Si3N4 barrier layer to allow more complete shape transition. The scheme represents a degree of control on the morphology of self-assembled epitaxial silicide NWs not achievable otherwise. (c) 2006 American Institute of Physics.
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