Periodic surface modulation on thin epitaxial FeSi2 layers on Si(001)

被引:13
|
作者
Hajjar, S [1 ]
Garreau, G [1 ]
Pelletier, S [1 ]
Bertoncini, P [1 ]
Wetzel, P [1 ]
Gewinner, G [1 ]
Imhoff, M [1 ]
Pirri, C [1 ]
机构
[1] Fac Sci & Tech, CNRS, UMR 7014, Lab Phys & Spect Elect, F-68093 Mulhouse, France
关键词
surface structure; morphology; roughness and topography; photoelectron spectroscopy; photoelectron diffraction; scanning tunneling microscopy; solid-phase epitaxy; metal-semiconductor interfaces; silicides; silicon;
D O I
10.1016/S0039-6028(03)00142-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology and the structure of thin metastable iron disilicide films grown on Si(0 0 1) are studied by scanning tunneling microscopy and X-ray photoelectron diffraction. It is shown that the FeSi2 silicide has a quadratic crystallographic structure, with the c-axis perpendicular to the sample surface. As to the film morphology, the silicide consists of rather flat islands with a root2 x root2R45degrees surface periodicity for a coverage lower than 4 ML. At a nominal Fe coverage of 4 ML, the silicon surface is almost completely covered. The surface exhibits a quite periodic height modulation of about 2Angstrom. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:940 / 945
页数:6
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