SURFACE CHARACTERIZATION OF EPITAXIAL, SEMICONDUCTING, FESI2 GROWN ON SI(100)

被引：45
|
作者：
ALVAREZ, J
HINAREJOS, JJ
MICHEL, EG
GALLEGO, JM
DEPARGA, ALV
DELAFIGUERA, J
OCAL, C
MIRANDA, R
机构：
[1] Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.105536
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have identified the composition and range of thermal stability of FeSi and FeSi2 films grown on Si(100) by solid phase epitaxy and reactive deposition epitaxy. Evidence for the semiconducting character of FeSi2 is obtained from photoemission measurements giving a low density of states at the Fermi level. Si enrichment at the outer surface of the silicides at temperatures much lower than previously thought has been found by depth profiling. Scanning tunneling microscopy reveals a rather inhomogeneous growth with a tendency towards epitaxial growth favored by the presence of surface steps on the Si substrate.
引用
收藏
页码：99 / 101
页数：3
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