Self-assembled epitaxial growth of high density β-FeSi2 nanodots on Si (001) and their spatially resolved optical absorption properties

被引：33
|
作者：
Nakamura, Yoshiaki [1 ,2 ]
Amari, Shogo
Naruse, Nobuyasu [2 ]
Mera, Yutaka [2 ]
Maeda, Koji [2 ]
Ichikawa, Masakazu [1 ,2 ]
机构：
[1] Univ Tokyo, Sch Engn, Dept Appl Phys, Quantum Phase Elect Ctr,Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Corp, CREST, Tokyo, Japan
来源：
CRYSTAL GROWTH & DESIGN | 2008年 / 8卷 / 08期
关键词：
D O I：
10.1021/cg800139c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A self-assembly technique for high density (similar to 1 x 10(11)cm(-2)) beta-FeSi2 nanodots epitaxially grown on Si (001) substrates was developed using a codeposition method of Fe and Si on ultrathin SiO2 films with Si nuclei. Photoabsorption spectra of individual nanodots and their photoabsorption maps at the direct-transition photoabsorption edge were obtained using electric field modulation spectroscopy combined with scanning tunneling microscopy with a nanometer spatial resolution.
引用
收藏
页码：3019 / 3023
页数：5
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共 46 条
  • [1] Density functional theory studies of the optical properties of a β-FeSi2 (100)/Si(001) interface at high pressure
    李海涛
    钱军
    韩芳芳
    李廷会
    [J]. Journal of Semiconductors, 2013, (07) : 11 - 14
  • [2] Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface
    H. Zhou
    J. Narayan
    [J]. Journal of Nanoparticle Research, 2006, 8 (5) : 601 - 601
  • [3] Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface
    Zhou, H.
    Narayan, J.
    [J]. JOURNAL OF NANOPARTICLE RESEARCH, 2006, 8 (05) : 595 - 600
  • [4] Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface
    H. Zhou
    J. Narayan
    [J]. Journal of Nanoparticle Research, 2006, 8 : 595 - 600
  • [5] Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001)Si
    Chen, SY
    Chen, HC
    Chen, LJ
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (19)
  • [6] Fonnation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2(001) substrate
    Chen, HC
    Liao, KF
    Lee, SW
    Cheng, SL
    Chen, LJ
    [J]. THIN SOLID FILMS, 2004, 461 (01) : 44 - 47
  • [7] GeSi/Si(001) structures with self-assembled islands: Growth and optical properties
    Vostokov, NV
    Drozdov, YN
    Lobanov, DN
    Novikov, AV
    Shaleev, MV
    Yablonskii, AN
    Krasilnik, ZF
    Ankudinov, AN
    Dunaevskii, MS
    Titkov, AN
    Lytvyn, P
    Yukhymchuk, VU
    Valakh, MY
    [J]. Quantum Dots: Fundamentals, Applications, and Frontiers, 2005, 190 : 333 - 351
  • [8] Electronic structure and optical properties of β-FeSi2(100)/Si(001) interface at high pressure
    Liu, L. Z.
    Wu, X. L.
    Liu, X. X.
    Shen, J. C.
    Li, T. H.
    Chu, Paul K.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (11)
  • [9] Luminescence properties of Si-capped β-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates
    Amari, Shogo
    Nakamura, Yoshiaki
    Ichikawa, Masakazu
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
  • [10] Luminescence properties of Si-capped β -FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates
    20141217470086
    [J]. Nakamura, Y. (nakamura@ee.es.osaka-u.ac.jp), 1600, American Institute of Physics Inc. (115):
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