Self-assembled epitaxial growth of high density β-FeSi2 nanodots on Si (001) and their spatially resolved optical absorption properties

被引：33
|
作者：
Nakamura, Yoshiaki [1 ,2 ]
Amari, Shogo
Naruse, Nobuyasu [2 ]
Mera, Yutaka [2 ]
Maeda, Koji [2 ]
Ichikawa, Masakazu [1 ,2 ]
机构：
[1] Univ Tokyo, Sch Engn, Dept Appl Phys, Quantum Phase Elect Ctr,Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Corp, CREST, Tokyo, Japan
来源：
CRYSTAL GROWTH & DESIGN | 2008年 / 8卷 / 08期
关键词：
D O I：
10.1021/cg800139c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A self-assembly technique for high density (similar to 1 x 10(11)cm(-2)) beta-FeSi2 nanodots epitaxially grown on Si (001) substrates was developed using a codeposition method of Fe and Si on ultrathin SiO2 films with Si nuclei. Photoabsorption spectra of individual nanodots and their photoabsorption maps at the direct-transition photoabsorption edge were obtained using electric field modulation spectroscopy combined with scanning tunneling microscopy with a nanometer spatial resolution.
引用
收藏
页码：3019 / 3023
页数：5
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