Room temperature growth and properties of ZnO films by pulsed laser deposition

被引：25

作者：

Ma, Xiangli ^{[1
]}

Zhang, Jun ^{[1
]}

Lu, Jianguo ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 04期

关键词：

Pulsed laser deposition; ZnO; Room temperature; Oxygen pressure; Thickness; ELECTRICAL-PROPERTIES; EPITAXY; GREEN;

D O I：

10.1016/j.apsusc.2010.08.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were prepared by pulsed laser deposition at room temperature on glass substrates with oxygen pressures of 10-30 Pa. The structural, electrical, and optical properties of ZnO films were studied in detail. ZnO films had an acceptable crystal quality with high c-axis orientation and smooth surface. The resistivity was in the 10(2) Omega cm order for ZnO films, with the electron concentration of 10(16)-10(17) cm(-3). All the films showed a high visible transmittance similar to 90% and a high UV absorption about 90-100%. The UV emission similar to 390 nm was observed in the photoluminescence spectra. The oxygen pressures in the 10-30 Pa range were suitable for room temperature growth of high-quality ZnO films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1310 / 1313

页数：4

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