Growth and magnetic properties of iron-based oxide thin films deposited by pulsed laser deposition at room temperature

被引:0
|
作者
Portier, X. [1 ]
Millon, E. [2 ]
Demange, V. [3 ]
Ollivier, S. [3 ]
Guilloux-Viry, M. [3 ]
Nistor, M. [4 ]
Hebert, C. [5 ]
Cachoncinlle, C. [2 ]
Perriere, J. [5 ]
机构
[1] Normandie Univ, Ctr Rech Ions MAteriaux & Photon CIMAP, ENSICAEN,CEA, CNRS,UMR 6252, F-14050 Caen, France
[2] Univ Orleans, Grp Rech Milieux Ionises GREMI, UMR 7344, CNRS, F-2 Orleans, France
[3] Univ Rennes, Inst Sci Chim Rennes ISCR, UMR CNRS 6226, ScanMAT UAR, F-35000 Rennes, France
[4] Natl Inst Lasers Plasma & Radiat Phys NILPRP, POB MG 36, Bucharest 077125, Romania
[5] Sorbonne Univ, Inst Nanosci Paris INSP, UMR 7588, CNRS, 4 Pl Jussieu, F-75252 Paris 5, France
来源
关键词
Pulsed laser deposition; Zn-doped iron oxide; Thin film; Epitaxy; Magnetic properties; EPITAXIAL-GROWTH; SAPPHIRE; OXYGEN; CEO2; FABRICATION; WURTZITE; FE1-XO; MGO;
D O I
10.1007/s00339-024-07674-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, room temperature epitaxial growth of Zn-doped iron oxide films (Zn: FeOx) was achieved by pulsed laser deposition, on c-cut sapphire substrates without any high temperature thermal treatments before the growth. The nature of the oxide phases (w & uuml;stite and/or spinel) present in the films depends on the oxygen pressure during the laser ablation. At the residual vacuum (2 x 10- 7 mbar), the (111) w & uuml;stite (Zn: FeO) textures was obtained in the films, while oxygen pressures between 2 x 10- 5 to 2 x 10- 3 mbar led to the growth of the spinel (Zn: Fe3O4) phase on the c-cut sapphire substrate. Moreover, the species emitted by the target in the 2 x 10- 7 to 2 x 10- 5 mbar range, preserve their high kinetic energy which allows an easy crystallization of the film on the substrate at room temperature, leading to the epitaxial growth of the wustite and spinel phases. Magnetic properties through M(H) curves at 10 K and 300 K, of the w & uuml;stite-based film grown under 2 x 10- 7 mbar were studied, and an exchange bias due to the presence of Fe3+ cation in the film is observed. Finally, the possible mechanisms of the room temperature epitaxial growth of the oxide films on the substrate are presented and discussed.
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页数:13
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