Thermal Processing for Continued Scaling of Semiconductor Devices

被引：0

作者：

Sharma, S. ^{[1
]}

Aderhold, W. ^{[1
]}

Sharma, K. Raman ^{[1
]}

Mayur, A. J. ^{[1
]}

机构：

[1] Appl Mat Inc, Silicon Syst Grp, Front End Prod, Sunnyvale, CA 94085 USA

来源：

2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) | 2014年

关键词：

MOSFET; Annealing; Millisecond; Laser Anneal; Device Integration; REDUCTION; SELENIUM; LASER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of annealing technology with a special consideration to thermodynamics, kinetics and integration thermal budgets. Equipment and process innovations to meet ever-changing material and device fabrication requirements are presented.

引用

页数：6

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