Large-signal modeling of high-voltage GaAs power HBTs

被引：3

作者：

Rudolph, M ^{[1
]}

Doerner, R ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年

关键词：

heterojunction bipolar transistor; semiconductor device modeling; equivalent circuit;

D O I：

10.1109/MWSYM.2005.1516628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents, modeling results for newly developed InGaP/GaAs power HBTs operating at bias voltages up to V-ce = 26 V. The devices are flip-cbip mounted for heat-sinking and deliver output powers above 10 W. It is shown that the FBH HBT model is capable of describing those devices despite the fact that it was developed originally for standard 'low-voltage' HBTs. This result is an important statement with respect to circuit design based on this promising technology.

引用

页码：457 / 460

页数：4

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