Atomic Force Microscope base nanolithography for reproducible micro and nanofabrication

被引:0
|
作者
Dehzangi, Arash [1 ]
Larki, Farhad [1 ]
Majlis, Burhanuddin Y. [1 ]
Kazemi, Zainab [1 ]
Ariannejad, MohammadMahdi [1 ]
Nasery, Mahmood Goodarz [2 ]
Navasery, Manizheh [2 ]
Saion, Elias B. [2 ]
Mohamed, Halimah K. [2 ]
Khalilzadeh, Nasrin [2 ]
Abdullah, A. Makarimi [3 ]
Hutagalung, Sabar D. [4 ]
机构
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, Selangor, Malaysia
[2] Univ Putra Malaysia, Dept Phys, Serdang 43400, Selangor, Malaysia
[3] Univ Kuala Lumpur, Malaysian Inst Marine Engn Technol, Kuala Lumpur, Malaysia
[4] Jazan Univ, Dept Phys, Fac Sci, Jazan, Saudi Arabia
关键词
Local anodic oxidation; Silicon-on-insulator; Nanolithography; Atomic force microscope; DOUBLE-GATE; SILICON; FABRICATION; LITHOGRAPHY; TRANSISTOR; OXIDATION; DEVICES; CHARGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomic force microscopy nanolithography (AFM) is a strong fabrication method for micro and nano structure due to its high spatial resolution and positioning abilities. Mixing AFM nanolithography with advantage of silicon-on-insulator (SOI) technology provides the opportunity to achieve more reliable Si nanostructures. In this letter, we try to investigate the reproducibility of AFM base nanolithography for fabrication of the micro/nano structures. In this matter local anodic oxidation (LAO) procedure applied to pattern a silicon nanostructure on ptype (10(15) cm(-3)) SOI using AFM base nanolithography. Then chemical etching is applied, as potassium hydroxide (saturated with isopropyl alcohol) and hydrofluoric etching for removing of Si and oxide layer, respectively. All parameters contributed in fabrication process were optimized and the final results revealed a good potential for using AFM base nanolithography in order to get a reproducible method of fabrication.
引用
收藏
页码:408 / 411
页数:4
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