Measurements of D-E hysteresis loop and ferroelectric activity in piezoelectric Li-doped ZnO

被引：0
|
作者：
Tamaki, N [1 ]
Onodera, A [1 ]
Sawada, T [1 ]
Yamashita, H [1 ]
机构：
[1] HOKKAI GAKUEN UNIV, FAC ENGN, DEPT ELECT & INFORMAT ENGN, SAPPORO, HOKKAIDO 064, JAPAN
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1996年 / 29卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ferroelectric activity in Li-doped n-type piezoelectric II-VI semiconductor ZnO was studied. We could successfully observe a ferroelectric D-E hysteresis loop in Zn1-xLixO ceramics for the first time. The spontaneous polarization of the sample (x = 0.1) is about 0.14 mu C/cm(2) at room temperature. The replacement of host Zn ions by small substitutional Li ions induces ferroelectricity in the wurtzite-type ZnO piezoelectric semiconductor. The behavior of dielectric anomaly and spontaneous polarization is very similar to that in a new ferroelectric Cd1-xZnxTe found recently.
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页码：S668 / S671
页数：4
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