65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime

被引：10
|
作者：
Kollakowski, S
Strittmatter, A
Dröge, E
Böttcher, EH
Bimberg, D
Reimann, O
Janiak, K
机构：
[1] Tech Univ Berlin, Inst Festkorperphys 1, D-10623 Berlin, Germany
[2] Tech Univ Brandenburg, Dept Electromatnet Theory, D-03044 Cottbus, Germany
[3] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.123181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on ultrafast waveguide-integrated metal-semiconductor-metal photodetectors based on low pressure metal organic chemical vapor deposition grown semiinsulating InP/InGaAs/InAlGaAs/InP layers. The vertically coupled detectors have an interned coupling efficiency of >90% at 1.3 and 1.55 mu m wavelength for detector lengths of 30 mu m. A 3 dB bandwidth of 65 GHz at 1.55 mu m wavelength is achieved by employing 0.3 mu m feature-size finger electrodes and an active layer thickness of ISO nm. Furthermore, we present results on high-performance devices with a buried waveguide structure fabricated by regrowth of InP:Fe. (C) 1999 American Institute of Physics. [S0003-6951(99)00703-2].
引用
收藏
页码：612 / 614
页数：3
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