High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55μm wavelength range

被引：7
|
作者：
Kollakowski, S [1 ]
Bottcher, EH [1 ]
Strittmatter, A [1 ]
Bimberg, D [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys 1, D-10623 Berlin, Germany
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 06期
关键词：
D O I：
10.1049/el:19980439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Waveguide-integrated metal-semiconductor-metal photodetectors based on MOCVD-grown InP/InGaAs/InAlGaAs/InP layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm, and 0.7 mu m feature-size electrodes. An internal coupling efficiency of greater than or equal to 90% has been achieved for detector lengths as short as 20 and 30 mu m at wavelengths of 1.3 and 1.5 mu m, respectively. A 3 dB bandwidth of 20 GHz at 1.55 mu m has been obtained.
引用
收藏
页码：587 / 589
页数：3
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