Spatial point analysis of quantum dot nucleation sites on InAs wetting layer

被引：11

作者：

Konishi, Tomoya ^{[1
]}

Tsukamoto, Shiro ^{[1
]}

机构：

[1] Anan Natl Coll Technol, Tokushima 7740017, Japan

来源：

SURFACE SCIENCE | 2011年 / 605卷 / 5-6期

关键词：

Semiconductor; MBE; STM; Wetting layer; Quantum dot; Nucleation; Spatial point analysis; Nearest-neighbor distance; GROWTH; SURFACE; GAAS;

D O I：

10.1016/j.susc.2010.12.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We perform spatial point analysis of InAs quantum dot (QD) nucleation sites and surface reconstruction domain patterns on an InAs wetting layer to investigate QD nucleation mechanisms in Stranski-Krastanow growth mode. An InAs wetting layer on a GaAs(001) substrate has been observed at 300 degrees C by using in situ scanning tunneling microscopy (STM) preceding QD formation. A nearest-neighbor analysis of the STM images finds that the point pattern of QD precursors is similar to that of (1 x 3)/(2 x 3) surface reconstruction domains which are specific to Ga-rich fluctuation. This provides the evidence that InAs QD nucleation is induced by Ga-rich fluctuation within an InAs wetting layer, as a technical implication for site-controlled QD growth for various QD devices. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：L1 / L5

页数：5

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