SCHOTKY BARRIER HEIGHT AND CALCULATION OF VOLTAGE-CURRENT CHARACTERISTICS OF Al/n-(SIC)1-x(ALN)x DIODES AND 4H-SIC HETEROJUNCTIONS

被引：0
|
作者：
Altukhov, V., I [1 ]
Sankin, A., V [1 ]
Antonov, V. F. [1 ]
Filipova, S., V [1 ]
Mityugova, A. [1 ]
机构：
[1] North Caucasus Fed Univ, Branch Pyatigorsk, Pyatigorsk, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2020年 / 62卷 / 09期
关键词：
Schottky barrier; SiC solid solutions; I-V characteristics of diodes; composite model; emission currents;
D O I：
10.1007/s11182-020-01889-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Schottky barrier heights in the M/n-(SiC)(1-x)(AlN)(x) systems are obtained on the assumption of a high density of surface states in the region of the metal (M) - SiC-AlN-solid solution contact. Current-voltage (I-V) characteristics of the Al/n-(SiC)(1-x)(AlN)(x) diodes are calculated. It is shown that at moderate concentrations of surface states (c approximate to 4-8), the Schottky barrier height Phi(x)(B)(C) of these diodes is close to the heterojunction potential barrier Phi(x)(g), which is the reason for the known similarity in the behavior of the corresponding I-V characteristics. The role of the ideality factors in the behavior of the I-V characteristics is analyzed. The obtained values of the Schottky barrier heights are in accordance with experimental data.
引用
收藏
页码：1663 / 1667
页数：5
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