New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS

被引：3

作者：

Yang, J. -W. ^{[1
]}

Harris, H. R. ^{[2
]}

Kang, C. Y. ^{[1
]}

Young, C. D. ^{[1
]}

Lee, K. T. ^{[3
]}

Lee, H. D. ^{[4
]}

Bersuker, G. ^{[1
]}

Lee, B. H. ^{[1
]}

Tseng, H. -H. ^{[1
]}

Jammy, R. ^{[5
]}

机构：

[1] SEMATECH, 2706 Montopolis Dr, Austin, TX 78741 USA

[2] AMD Assignee, Austin, TX 78741 USA

[3] POSTECH, Austin, TX 78741 USA

[4] Chungnam Natl Univ, Austin, TX 78741 USA

[5] IBM assignee, Austin, TX 78741 USA

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

D O I：

10.1109/RELPHY.2008.4559015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case of sufficiently high gate voltage, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension resulting in impact ionization at the source as well as drain junctions. Hot carrier stress with accelerated gate voltage may lead to an incorrect estimation of lifetime in nano-scale floating body MOSFETs.

引用

页码：739 / +

页数：2

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