Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs

被引：4

作者：

Liu, Kuan-Ju ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Yang, Ren-Ya ^{[3
]}

Chen, Ching-En ^{[4
]}

Ho, Szu-Han ^{[4
]}

Tsai, Jyun-Yu ^{[1
]}

Hsieh, Tien-Yu ^{[1
]}

Cheng, Osbert ^{[5
]}

Huang, Cheng-Tung ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[5] United Microelect Corp, Device Dept, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2014年 / 572卷

关键词：

Floating body effect (FBE); Hot carrier effect (HCE); Silicon-on-insulator (SOI); RANDOM-ACCESS MEMORY; HOPPING CONDUCTION; OXIDE; MODEL; RRAM; ORIGIN; CHANNEL;

D O I：

10.1016/j.tsf.2014.08.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：39 / 43

页数：5

共 50 条

[1] On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress
Ang, DS
Ling, CH
MICROELECTRONICS RELIABILITY, 1999, 39 (09) : 1311 - 1322
[2] New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
Yang, J. -W.
Harris, H. R.
Bersuker, G.
Kang, C. Y.
Oh, J.
Lee, B. H.
Tseng, H. -H.
Jammy, R.
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) : 54 - 56
[3] Effect of Reverse Body Bias on Hot Carrier Induced Degradation of n-MOSFETs
Atzeni, Laura
Rossetti, Mattia
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (01) : 80 - 85
[4] DYNAMIC DEVICE DEGRADATION DURING HOT-CARRIER STRESS IN DDD N-MOSFETS
CHEN, SL
GONG, J
YANG, SH
SOLID-STATE ELECTRONICS, 1993, 36 (04) : 501 - 511
[5] Edge and floating body effects on hot-carrier-induced degradation in FD SOI n-MOSFETs
Renn, SH
Szelag, B
Balestra, F
Raynaud, C
PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 276 - 281
[6] Hot-carrier degradation for deep-submicron N-MOSFETs introduced by backend processing
Lie, DYC
Xia, W
Yota, J
Joshi, AB
Zwingman, R
Williams, R
Kerametlian, V
Cerney, D
Min, BW
Kwong, DL
MICROELECTRONIC DEVICE TECHNOLOGY, 1997, 3212 : 258 - 267
[7] New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS
Yang, J. -W.
Harris, H. R.
Kang, C. Y.
Young, C. D.
Lee, K. T.
Lee, H. D.
Bersuker, G.
Lee, B. H.
Tseng, H. -H.
Jammy, R.
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 739 - +
[8] Hot-carrier reliability in n-MOSFETs used as pass-transistors
Goguenheim, D
Bravaix, A
Vuillaume, D
Varrot, M
Revil, N
Mortini, P
MICROELECTRONICS AND RELIABILITY, 1998, 38 (04): : 539 - 544
[9] Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs
Bravaix, A
Goguenheim, D
Revil, N
Vincent, E
Varrot, M
Mortini, P
MICROELECTRONICS RELIABILITY, 1999, 39 (01) : 35 - 44
[10] Effects on 0.13 μm floating-body partially depleted SOI n-MOSFETs in low temperature operation
Martino, JA
Pavanello, MA
Simoen, E
Claeys, C
LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES, 2004, 2003 (27): : 3 - 15

← 1 2 3 4 5 →