Characteristic Analysis of Thin-Film Phototransistors

被引：0

作者：

Haruki, Shota ^{[1
]}

Fuchiya, Takahiro ^{[1
]}

Kadonome, Takayuki ^{[1
]}

Tanaka, Takumi ^{[1
]}

Matsuda, Tokiyoshi ^{[1
]}

Kimura, Mutsumi ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga, Japan

来源：

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年

关键词：

characteristic analysis; thin-film phototransistors (TFPT);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.

引用

页数：2

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