Characteristic Analysis of Thin-Film Phototransistors

被引：0
|
作者：
Haruki, Shota [1 ]
Fuchiya, Takahiro [1 ]
Kadonome, Takayuki [1 ]
Tanaka, Takumi [1 ]
Matsuda, Tokiyoshi [1 ]
Kimura, Mutsumi [1 ]
机构：
[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga, Japan
来源：
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年
关键词：
characteristic analysis; thin-film phototransistors (TFPT);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
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页数：2
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