Characterization of Cu2ZnSnSe4 solar cells prepared from electrochemically co-deposited Cu-Zn-Sn alloy

被引：28
|
作者：
Kondrotas, R. [1 ]
Juskenas, R. [1 ]
Naujokaitis, A. [1 ,2 ]
Selskis, A. [1 ]
Giraitis, R. [1 ]
Mockus, Z. [1 ]
Kanapeckait, S. [1 ]
Niaura, G. [1 ]
Xie, H. [3 ]
Sanchez, Y. [3 ]
Saucedo, E. [3 ]
机构：
[1] State Res Inst Ctr Phys Sci & Technol, Savanoriu Ave 231, Vilnius, Lithuania
[2] Vilnius Univ, Fac Phys, LT-10222 Vilnius, Lithuania
[3] IREC, Catalonia Inst Energy Res, Barcelona, Spain
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 132卷
关键词：
CZTSe; Electrochemical co-deposition; Selenization; Solar cells; Cross-section; CZTS THIN-FILMS; STEP ELECTRODEPOSITION; COMPLEXING AGENT; ABSORBER LAYERS; SINGLE; SULFURIZATION; SELENIZATION; PRECURSORS;
D O I：
10.1016/j.solmat.2014.08.010
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Cu-Zn-Sn (CZT) precursors for Cu2ZnSnSe4 (CZTSe) solar cell were prepared by electrochemical co-deposition method with different metals composition. CZT precursors were preliminary annealed in three different atmospheres in order to obtain homogenous, without pores Cu-Zn-Sn layers. A high crystalline quality CZTSe absorber was synthesised as has been determined by X-ray diffraction and Raman spectroscopy methods. CZTSe based solar cells were fabricated and champion cell demonstrated 2.7% efficiency and reached as high as 70% of external quantum efficiency. Scanning electron microscope investigations of CZTSe solar cells cross-section revealed that Mo/CZTSe interface exhibits large voids and local delamination from Mo layer. The back contact issues are detrimental to solar cell performance reducing shunt resistance and open circuit voltage. (C) 2014 Elsevier B.V. All rights reserved.
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页码：21 / 28
页数：8
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