Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique

被引：133
|
作者：
Baba, Masakazu [1 ]
Toh, Katsuaki [1 ]
Toko, Kaoru [1 ]
Saito, Noriyuki [2 ]
Yoshizawa, Noriko [2 ]
Jiptner, Karolin [3 ]
Sekiguchi, Takashi [3 ]
Hara, Kosuke O. [4 ]
Usami, Noritaka [4 ,5 ]
Suemasu, Takashi [1 ,5 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] AIST, IBEC Innovat Platform, Electron Microscope Facil, Tsukuba, Ibaraki 3058569, Japan
[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2012年 / 348卷 / 01期
基金：
日本科学技术振兴机构;
关键词：
Molecular beam epitaxy; Semiconductor silicon compounds; THIN-FILMS; SOLAR-CELLS; GROWTH; SILICON;
D O I：
10.1016/j.jcrysgro.2012.03.044
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
a-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1-0.3 mu m, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 mu m by an electron-beam-induced current technique. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：75 / 79
页数：5
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