Investigation of Si Dendrites by Electron-Beam-Induced Current

被引：0

作者：

Yi, Wei ^{[1
]}

Chen, Jun ^{[1
]}

Ito, Shun ^{[2
]}

Nakazato, Koji ^{[1
]}

Kimura, Takashi ^{[1
]}

Sekiguchi, Takashi ^{[1
,3
]}

Fujiwara, Kozo ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

CRYSTALS | 2018年 / 8卷 / 08期

关键词：

mc-Si; dendrite; EBIC; grain boundaries; DIRECTIONAL SOLIDIFICATION; GRAIN-BOUNDARIES; SILICON; GROWTH; DEFECTS;

D O I：

10.3390/cryst8080317

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.

引用

页数：8

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