Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique

被引：133

作者：

Baba, Masakazu ^{[1
]}

Toh, Katsuaki ^{[1
]}

Toko, Kaoru ^{[1
]}

Saito, Noriyuki ^{[2
]}

Yoshizawa, Noriko ^{[2
]}

Jiptner, Karolin ^{[3
]}

Sekiguchi, Takashi ^{[3
]}

Hara, Kosuke O. ^{[4
]}

Usami, Noritaka ^{[4
,5
]}

Suemasu, Takashi ^{[1
,5
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] AIST, IBEC Innovat Platform, Electron Microscope Facil, Tsukuba, Ibaraki 3058569, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 348卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

Molecular beam epitaxy; Semiconductor silicon compounds; THIN-FILMS; SOLAR-CELLS; GROWTH; SILICON;

D O I：

10.1016/j.jcrysgro.2012.03.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

a-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1-0.3 mu m, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 mu m by an electron-beam-induced current technique. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：75 / 79

页数：5

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