Pressure-induced metal-insulator transition in spinel compound CuV2S4

被引：5
|
作者：
Okada, H. [1 ]
Koyama, K. [1 ]
Hedo, M. [2 ]
Uwatoko, Y. [3 ]
Watanabe, K. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, High Field Lab Superconducting Mat, Sendai, Miyagi 9808577, Japan
[2] Univ Ryukyus, Fac Sci, Okinawa 9030213, Japan
[3] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2008年 / 403卷 / 5-9期
关键词：
spinel; CuV2S4; charge density wave; high pressure; electrical resistivity;
D O I：
10.1016/j.physb.2007.10.215
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In order to investigate the pressure effect on electrical properties Of CuV2S4, We performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1612 / 1613
页数：2
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