Al-doped and pure ZnO thin films elaborated by sol-gel spin coating process for optoelectronic applications

被引：8
|
作者：
Maache, M. [1 ]
Devers, T. [2 ]
Chala, A. [3 ]
机构：
[1] Ziane Achour Univ, Dept Sci Matter, Djelfa 17000, Algeria
[2] Univ Orleans, IUT Chartres, ICMN, F-28000 Chartres, France
[3] Mohamed Khider Univ, Dept Sci Matter, Biskra 07000, Algeria
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 12期
关键词：
OPTICAL-PROPERTIES; ORIENTATION; TEMPERATURE; DEPOSITION; CELLS;
D O I：
10.1134/S1063782617120132
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.
引用
收藏
页码：1604 / 1610
页数：7
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