ZnO and Al-doped ZnO Sol-Gel Properties

被引:0
|
作者
Ben Moussa, N. [1 ,2 ]
Lajnef, M. [1 ]
Jebari, N. [2 ]
Mahut, F. [2 ]
Bayle, F. [2 ]
Villebasse, C. [2 ]
Durnez, A. [2 ]
Dupuis, C. [2 ]
Maillard, F. [2 ]
Lafosse, X. [2 ]
Chtourou, R. [1 ]
Herth, E. [2 ]
机构
[1] Univ Tunis El Manar, Lab Nanomat & Syst Renewable Energies LaNSER, Res & Technol Ctr Energy, Fac Sci Tunis, Technopk Borj Cedria,BP 095, Hammam Lif, Tunisia
[2] Univ Paris Sud, Univ Paris Saclay, Ctr Nanosci & Nanotechnol, Palaiseau, France
关键词
Zinc oxide; TCOs; CMOS Compatible; OXIDE-FILMS; THIN; LUMINESCENCE;
D O I
10.1109/DTIP54218.2021.9568674
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Undoped ZnO and Al-doped ZnO (AZO) were synthesized by sol-gel method and deposited by spin coating. Zinc acetate dehydrate was used as precursor, while ethanolamine and ethanol were used as stabilizer and solvent, respectively, and aluminum nitrate nonahydrate was used as dopant. A comparative study of undoped ZnO and Al-doped ZnO (AZO) deposited by spin-coating at 0.75M was carried out. In this study optical, morphological, structural properties and crystallinity were investigated.
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页数:6
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