A mmW low power VCO with high tuning range in 28nm FDSOI CMOS technology

被引:0
|
作者
Vallet, Mathieu
Richard, Olivier [1 ]
Deval, Yann [2 ]
Belot, Didier [1 ]
机构
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France
[2] IMS Bordeaux, F-33405 Talence, France
关键词
low power VCO; mmW; 40GHz; 28nm FDSOI; Wifi-WiGig convergence; wide tuning range;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 28nm FDSOI CMOS low power VCO working at 40 GHz frequency is presented in this paper. The VCO core only consumes 6mW from a 1 V supply voltage. A wide tuning range of 18.5 % from 38.3 GHz to 46.1 GHz is reached with a tuning voltage from 0 to 1 V. A phase noise higher than -120.5 dBc/Hz at 10 MHz offset has been observed after post-layout simulations. A variable inductance approach has been chosen in order to maintain a sufficiently low phase noise despite significant constraints caused by the advanced technology nodes and the large tuning range needed.
引用
收藏
页码:522 / 525
页数:4
相关论文
共 50 条
  • [1] Integration of SPAD in 28nm FDSOI CMOS technology
    de Albuquerque, T. Chaves
    Calmon, F.
    Clerc, R.
    Pittet, P.
    Benhammou, Y.
    Golanski, D.
    Jouan, S.
    Rideau, D.
    Cathelin, A.
    2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 82 - 85
  • [2] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
    李竹
    王志功
    李智群
    李芹
    刘法恩
    Journal of Semiconductors, 2014, (12) : 137 - 142
  • [3] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
    Li Zhu
    Wang Zhigong
    Li Zhiqun
    Li Qin
    Liu Faen
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (12)
  • [4] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
    李竹
    王志功
    李智群
    李芹
    刘法恩
    Journal of Semiconductors, 2014, 35 (12) : 137 - 142
  • [5] Low Power Frequency Dividers using TSPC logic in 28nm FDSOI Technology
    Hossain, Md Sazzad
    Moreira, Mateus Bernardino
    Sandrez, Francois
    Rivet, Francois
    Lapuyade, Herve
    Deval, Yann
    2022 IEEE 13TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS), 2022, : 89 - 92
  • [6] Energy Study for 28nm FDSOI Technology
    Kheirallah, Rida
    Azemard, Nadine
    Ducharme, Gilles
    PROCEEDINGS 2015 6TH INTERNATIONAL WORKSHOP ON CMOS VARIABILITY (VARI), 2015, : 23 - 26
  • [7] An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology
    Lakeh, Mohammadreza Dolatpoor
    Kammerer, Jean-Baptiste
    Uhring, Wilfried
    Schell, Jean-Baptiste
    Calmon, Francis
    2020 IEEE SENSORS, 2020,
  • [8] A Low Jitter Low Power and Wide Tuning Range Differential Ring Oscillator Topology in 28nm CMOS Technology for Clock Synthesizer Applications
    Macera, Giuseppe
    2018 29TH IRISH SIGNALS AND SYSTEMS CONFERENCE (ISSC), 2018,
  • [9] A Concurrent Transmitter in CMOS 28nm FDSOI Technology based on Walsh sequences Generator
    Bouassida, Nassim
    Rivet, Francois
    Deval, Yann
    Duperray, David
    Cathelin, Andreia
    2016 14TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2016,
  • [10] A Layout Strategy for Low-Power Voltage Level Shifters in 28nm UTBB FDSOI Technology
    Corsonello, P.
    Frustaci, F.
    Perri, S.
    2015 AEIT INTERNATIONAL ANNUAL CONFERENCE (AEIT), 2015,