IC design of low power, wide tuning range VCO in 90 nm CMOS technology

被引：1

作者：

Li Zhu ^{[1
,2
]}

Wang Zhigong ^{[1
]}

Li Zhiqun ^{[1
]}

Li Qin ^{[1
]}

Liu Faen ^{[1
]}

机构：

[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China

[2] Nanjing Univ Sci & Technol, Nanjing 210094, Jiangsu, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2014年 / 35卷 / 12期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

CMOS; microwave; millimeter wave; IMOS varactor; phase noise; voltage controlled oscillators;

D O I：

10.1088/1674-4926/35/12/125013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27-32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of -101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of -185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current.

引用

页数：6

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