Electrical characteristics of a ZrO2/SiO2 modified tunnel barrier for low-temperature non-volatile memory

被引：4
|
作者：
You, Hee-Wook [1 ]
Cho, Won-Ju [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 10期
关键词：
Nonvolatile memory; Tunnel barrier; ZrO2; Charge trap flash; FILMS; OXIDE; LAYER; HFO2;
D O I：
10.1016/j.tsf.2011.01.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical characteristics of nonvolatile memory, which consists of an asymmetrical ZrO2/SiO2 (ZO) modified tunnel barrier, a high-k HfO2 trapping layer and an Al2O3 blocking layer, were investigated for the application of a tunnel barrier engineered nonvolatile memory at low process temperatures. The efficiency of the ZO modified tunnel barrier on the charge trap flash (CTF) memory cell was compared to a conventional single SiO2 tunnel barrier. The ZO tunnel barrier revealed field sensitivity larger than the single SiO2 tunnel barrier. The programming and erasing speeds as well as the retention and endurance characteristics of CTF memory were largely enhanced. Moreover, the forming gas annealing process in 2% diluted H-2/N-2 ambient improved the charging trapping property and tunneling sensitivity of the ZO modified tunnel barrier. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3397 / 3400
页数：4
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